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RD100HHF1 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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RD100HHF1 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 9 page  < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W Publication Date : Oct．2011 3 TYPICAL CHARACTERISTICS CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE 0 40 80 120 160 200 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds VS. Crss CHARACTERISTICS 0 10 20 30 40 0 10 20 30 Vds(V) Ta=+25°C f=1MHz Vds VS. Coss CHARACTERISTICS 0 100 200 300 400 500 0 10 20 30 Vds(V) Ta=+25°C f=1MHz Vds VS. Ciss CHARACTERISTICS 0 50 100 150 200 250 300 0 10 20 30 Vds(V) Ta=+25°C f=1MHz Vds-Ids CHARACTERISTICS 0 2 4 6 8 10 0 2 4 6 8 10 Vds(V) Ta=+25°C Vgs=5.7V Vgs=5.4V Vgs=5.1V Vgs=4.8V Vgs=4.2V Vgs=6V Vgs=4.5V Vgs-Ids CHARACTERISTICS 0 2 4 6 8 10 0 1 2 3 4 5 6 7 Vgs(V) Ta=+25°C Vds=10V |
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