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RD07MVS1B Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # RD07MVS1B
Description  RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RD07MVS1B Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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< Silicon RF Power MOS FET (Discrete) >
RD07MVS1B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
Publication Date : Oct．2011
4
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
@f=175MHz
0
10
20
30
40
-5
0
5
10 15
20
25
30
Pin(dBm)
0
20
40
60
80
Ta=+25°C
f=175MHz
Vdd=7.2V
Idq=700mA
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS
@f=175MHz
0
2
4
6
8
10
12
14
0
500
1000
Pin(mW)
30
40
50
60
70
80
90
100
Po
ηd
Idd
Ta=25°C
f=175MHz
Vdd=7.2V
Idq=700mA
Vdd-Po CHARACTERISTICS
@f=175MHz
0
5
10
15
20
25
30
4
6
8
10
12
14
Vdd(V)
0
1
2
3
4
5
6
Po
Idd
Ta=25°C
f=175MHz
Pin=0.3W
Icq=700mA
Zg=ZI=50 ohm
Vdd-Po CHARACTERISTICS
@f=520MHz
0
5
10
15
20
25
4
6
8
10
12
14
Vdd(V)
0
1
2
3
4
5
Po
Idd
Ta=25°C
f=520MHz
Pin=0.7W
Icq=750mA
Zg=ZI=50 ohm
Pin-Po CHARACTERISTICS
@f=520MHz
0
10
20
30
40
0
5
10
15
20
25
30
Pin(dBm)
0
20
40
60
80
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=750mA
Po
ηｄ
Ｉｄｄ
Gp
Pin-Po CHARACTERISTICS
@f=520MHz
0
2
4
6
8
10
12
14
0.0
0.5
1.0
1.5
Pin(W)
30
40
50
60
70
80
90
100
Po
ηd
Idd
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=750mA


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