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RD06HVF1 Datasheet(PDF) 6 Page - Mitsubishi Electric Semiconductor |
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RD06HVF1 Datasheet(HTML) 6 Page - Mitsubishi Electric Semiconductor |
6 / 9 page < Silicon RF Power MOS FET (Discrete) > RD06HVF1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W Publication Date : Oct.2011 6 INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 175 4.25-j25.6 5.64-j1.05 Po=10W, Vdd=12.5V,Pin=0.3W f=175MH Zo f=135MHz Zo f=175MHz Zout* f=175MHz Zin* Zo=50ohm |
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