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RD00HHS1 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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RD00HHS1 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 7 page < Silicon RF Power MOS FET (Discrete) > RD00HHS1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W Publication Date : Oct.2011 2 ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) LIMITS UNIT SYMBOL PARAMETER CONDITIONS MIN TYP MAX. IDSS Zero gate voltage drain current VDS=17V, VGS=0V - - 25 uA IGSS Gate to source leak current VGS=10V, VDS=0V - - 1 uA Vth Gate threshold Voltage VDS=12V, IDS=1mA 1 2 3 V Pout Output power 0.3 0.7 - W D Drain efficiency VDD=12.5V, Pin=4mW, f=30MHz,Idq=50mA 55 65 - % Note : Above parameters , ratings , limits and conditions are subject to change. |
Similar Part No. - RD00HHS1_11 |
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Similar Description - RD00HHS1_11 |
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