RA60H3847M1-101 datasheet(2/11 Pages) MITSUBISHI

Part #	RA60H3847M1-101

Description	RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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RA60H3847M1

RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

Publication Date :Apr.2011

2

MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

VDD

Drain Voltage

VGG<5V, Pin=0W

17

V

VGG

Gate Voltage

VDD<12.5V, Pin=50mW

6

V

Input Power

100

mW

Pout

Output Power

80

W

Tcase(OP) Operation Case Temperature Range

f=378-470MHz,

VGG≦5V

-30 to +100

°C

Tstg

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

F

Frequency Range

378

-

470

MHz

Pout

Output Power

VDD=12.5V

60

-

W

T

Total Efficiency

VGG=5V

40

-

%

2fo

2

nd Harmonic

Pin=50mW

-

-35

dBc

3fo

3

rd Harmonic

-

-40

dBc



in

Input VSWR

-

3:1

—

IGG

Gate Current

VDD=0V, VGG=5V, Pin=0W

-

5

6

mA

IDD

Leakage Current

VDD=17V, VGG=0V, Pin=0W

-

1

mA

—

Stability

VDD=10.0-15.2V, Pin=25-70mW,

5<Pout <65W (VGG control), Load VSWR=3:1

No parasitic oscillation

more than -65dBc

—

Load VSWR Tolerance

VDD=15.2V, Pin=50mW,

Pout=60W (VGG control), Load VSWR=20:1

No degradation or

destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.

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RA60H3847M1-101 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

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