RA45H7687M1_11 datasheet(2/10 Pages) MITSUBISHI

Part #	RA45H7687M1

Description	RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

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< Silicon RF Power Modules >

RA45H7687M1

RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

Publication Date : Oct．2011

2

MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

RATING

UNIT

VDD

Drain Voltage

VGG1=3.4V ± 7%, VGG2<5V, Pin=0W

17

V

VGG1

Gate Voltage 1

VGG2<5V, VDD<12.8V, Pin=50mW

4.5

V

VGG2

Gate Voltage 2

VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW

6

V

Input Power

100

mW

Pout

Output Power

60

W

Tcase(OP)

Operation Case Temperature Range

f=763-870MHz,

VGG1=3.4V ± 7%, VGG2<5V

-30 to +100

°C

Tstg

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

F

Frequency Range

763

-

870

MHz

Pout1

Output Power 1

VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW

45

-

W

T

Total Efficiency

VDD=12.8V

33

-

%

2fo

2

nd Harmonic

VGG1=3.4V

-

-40

dBc

3fo

3

nd Harmonic

VGG2=5V

-

-35

dBc



in

Input VSWR

Pin=50mW

-

3:1

—

IDD

Leakage Current

VDD=17V, VGG1=VGG2=0V, Pin=0W

-

1

mA

Pout2

Output Power 2*

VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=2dBm

-

1.5

W

—

Stability

VDD=10.0-15.2V, Pin=1-100mW,

1.5<Pout <50W (VGG2 control, VGG1=3.4V),

Load VSWR=3:1

No parasitic oscillation

—

Load VSWR Tolerance

VDD=15.2V, Pin=50mW,

Pout=45W (VGG2 control, VGG1=3.4V),

Load VSWR=20:1

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.

*: This is guaranteed as design value.

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