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RA13H1317M Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part # RA13H1317M
Description  RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA13H1317M Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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<Silicon RF Power Modules >
RA13H1317M
RoHS Compliance ,
135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
Publication Date : Jul.2011
4
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
versus GATE VOLTAGE
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
0
5
10
15
20
25
30
1.5
2
2.5
3
3.5
4
4.5
5
5.5
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=135MHz,
VDD=12.5V,
Pin=50mW
IDD
0
5
10
15
20
25
30
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD(V)
0
1
2
3
4
5
6
Pout
f=175MHz,
VGG=5V,
Pin=50mW
IDD
0
5
10
15
20
25
30
1.5
2
2.5
3
3.5
4
4.5
5
5.5
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=160MHz,
VDD=12.5V,
Pin=50mW
IDD
0
5
10
15
20
25
30
1.5
2
2.5
3
3.5
4
4.5
5
5.5
GATE VOLTAGE VGG(V)
0
1
2
3
4
5
6
Pout
f=175MHz,
VDD=12.5V,
Pin=50mW
IDD
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)


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