Silicon RF Power Semiconductors

RoHS COMPLIANCE

RA

RA

RA

RA07H4452

07H4452

07H4452

07H4452M

M

M

M

RA07H4452M

28 Jun 2010

2/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

Drain Voltage

16

V

Drain Voltage

13.2

V

Gate Voltage

4

V

Input Power

30

mW

Output Power

10

W

Operation Case Temperature Range

f=440-520MHz,

Ω

-30 to +90

°C

Storage Temperature Range

-40 to +110

°C

The above parameters are independently guaranteed.

Ω, unless otherwise specified)

SYMBOL PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

f

Frequency Range

440

-

520

MHz

Output Power

7

-

-

W

Total Efficiency

40

-

-

%

2

-

-

-25

dBc

Input VSWR

-

-

4:1

—

Gate Current

-

1

-

mA

—

Stability

Load VSWR=4:1

No parasitic oscillation

—

—

Load VSWR Tolerance

Load VSWR=20:1

No degradation or destroy

—

All parameters, conditions, ratings, and limits are subject to change without notice.