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PS21993-4EW Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor

Part # PS21993-4EW
Description  Dual-In-Line Package Intelligent Power Module
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS21993-4EW Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21993-4E/-4AE/-4CE/-4EW
TRANSFER-MOLD TYPE
INSULATED TYPE
Sep. 2008
8
Error output Fo
Output current Ic
Control supply voltage VD
Protection circuit state
Control input
b1
b2
b3
b5
RESET
RESET
UVDt
UVDr
SET
b6
b4
b7
Protection circuit state
N-side control
input
Fault output Fo
Sense voltage of the
shunt resistor
Output current Ic
Internal IGBT gate
SC referenc e voltage
RC circuit time constant delay
a5
a8
a4
a3
a1
a2
SC
RESET
SET
a7
a6
Fig. 8 TIMING CHART OF THE PROTECTIVE FUNCTIONS
[A] Short-Circuit Protection (N-side only with the external shunt resistor and RC filter)
a1. Normal operation : IGBT ON and carrying current.
a2. Short circuit is detected (SC trigger).
a3. All N-side IGBTs’ gates are hard interrupted.
a4. All N-side IGBTs turn OFF.
a5. FO is output (tFO(min) = 20
µs).
a6. Input “L”.
a7. Input “H”. But IGBT is still OFF state during outputting FO.
a8. IGBT turns ON when L
→H signal is input after FO is reset.
[B] Under-Voltage Protection (N-side, UVD)
b1. Control supply voltage VD rises : After VD level rises over under voltage reset level (UVDr), the circuits start to operate when next input
is applied.
b2. Normal operation : IGBT ON and carrying current.
b3. VD level dips to under voltage trip level. (UVDt).
b4. All N-side IGBTs turn OFF in spite of control input condition.
b5. FO is output. (tFO
≥ 20µs and FO outputs continuously during UV period).
b6. VD level rises over UVDr.
b7. Normal operation : IGBT ON and carrying current.


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