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PS21993-4EW Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor |
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PS21993-4EW Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor |
8 / 10 page MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21993-4E/-4AE/-4CE/-4EW TRANSFER-MOLD TYPE INSULATED TYPE Sep. 2008 8 Error output Fo Output current Ic Control supply voltage VD Protection circuit state Control input b1 b2 b3 b5 RESET RESET UVDt UVDr SET b6 b4 b7 Protection circuit state N-side control input Fault output Fo Sense voltage of the shunt resistor Output current Ic Internal IGBT gate SC referenc e voltage RC circuit time constant delay a5 a8 a4 a3 a1 a2 SC RESET SET a7 a6 Fig. 8 TIMING CHART OF THE PROTECTIVE FUNCTIONS [A] Short-Circuit Protection (N-side only with the external shunt resistor and RC filter) a1. Normal operation : IGBT ON and carrying current. a2. Short circuit is detected (SC trigger). a3. All N-side IGBTs’ gates are hard interrupted. a4. All N-side IGBTs turn OFF. a5. FO is output (tFO(min) = 20 µs). a6. Input “L”. a7. Input “H”. But IGBT is still OFF state during outputting FO. a8. IGBT turns ON when L →H signal is input after FO is reset. [B] Under-Voltage Protection (N-side, UVD) b1. Control supply voltage VD rises : After VD level rises over under voltage reset level (UVDr), the circuits start to operate when next input is applied. b2. Normal operation : IGBT ON and carrying current. b3. VD level dips to under voltage trip level. (UVDt). b4. All N-side IGBTs turn OFF in spite of control input condition. b5. FO is output. (tFO ≥ 20µs and FO outputs continuously during UV period). b6. VD level rises over UVDr. b7. Normal operation : IGBT ON and carrying current. |
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