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PS21963-4ES Datasheet(PDF) 8 Page - Mitsubishi Electric Semiconductor |
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PS21963-4ES Datasheet(HTML) 8 Page - Mitsubishi Electric Semiconductor |
8 / 8 page MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21963-4ES TRANSFER-MOLD TYPE INSULATED TYPE Mar. 2007 8 Bootstrap negative electrodes should be connected to U, V, W terminals directly and separated from the main output wires. WOUT VOUT DIP-IPM C3 C2 C2 C1 C1 C2 C1 UOUT WP VWB VP VVB 15V line 5V line UP COM UOUT VOUT VNO WOUT CIN GND F o WN VN VCC C A CIN NW NV NU W V U P VWS VVS VUS VUB VCC Fo WN VN UN UN WP VP UP VNC VNC VN1 VP1 VUFB VVFB VWFB C3 HVIC LVIC M Long wiring here might cause short-circuit. Long wiring here might cause SC level fluctuation and malfunction. Long GND wiring here might generate noise to input and cause IGBT malfunction. Comparator C4 R1 B Vref C4 R1 B Vref C4 N1 R1 B Vref OR Logic External protection circuit Shunt resistors - + - + - + Note 1 : Input drive is High-Active type. There is a 3.3kΩ(min.) pull-down resistor integrated in the IC input circuit. To prevent malfunction, the wiring of each in- put should be as short as possible. When using RC coupling circuit, make sure the input signal level meet the turn-on and turn-off threshold voltage. 2: Thanks to HVIC inside the module, direct coupling to MCU without any opto-coupler or transformer isolation is possible. 3: FO output is open drain type. It should be pulled up to the positive side of a 5V power supply by a resistor of about 10kΩ. 4: To prevent erroneous protection, the wiring of A, B, C should be as short as possible. 5: The time constant R1C4 of the protection circuit should be selected in the range of 1.5-2µs. SC interrupting time might vary with the wiring pattern. Tight tolerance, temp-compensated type is recommended for R1, C4. 6: All capacitors should be mounted as close to the terminals of the DIP-IPM as possible. (C1: good temperature, frequency character- istic electrolytic type, and C2, C3: good temperature, frequency and DC bias characteristic ceramic type are recommended.) 7: To prevent surge destruction, the wiring between the smoothing capacitor and the P, N1 terminals should be as short as possible. Generally a 0.1-0.22µF snubber between the P-N1 terminals is recommended. 8: Two VNC terminals (9 & 16 pin) are connected inside DIP-IPM, please connect either one to the 15V power supply GND outside and leave another one open. 9: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction. 10 : If control GND is connected to power GND by broad pattern, it may cause malfunction by power GND fluctuation. It is recommended to connect control GND and power GND at only a point. 11 : The reference voltage Vref of comparator should be set up the same rating of short circuit trip level (Vsc(ref): min.0.43V to max.0.53V). 12 : OR logic output high level should exceed the maximum short circuit trip level (Vsc(ref): max.0.53V). Fig. 6 AN EXAMPLE OF TYPICAL DIP-IPM APPLICATION CIRCUIT C1: Electrolytic capacitor with good temperature characteristics C2,C3: 0.22~2µF R-category ceramic capacitor for noise filtering |
Similar Part No. - PS21963-4ES_09 |
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Similar Description - PS21963-4ES_09 |
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