MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21963-4E/-4AE/-4CE/-4EW

TRANSFER-MOLD TYPE

INSULATED TYPE

Aug. 2007

4

V

V

V

V

mA

V

20

20

1

Control supply voltage

Control supply voltage

Input voltage

Fault output supply voltage

Fault output current

Current sensing input voltage

450

500

600

8

16

24.3

–20~+125

Applied between P-N

Applied between P-N

°C

°C, less than 1ms

°C, per 1 chip

(Note 1)

Condition

Symbol

Parameter

Ratings

Unit

Supply voltage

Supply voltage (surge)

Collector-emitter voltage

Each IGBT collector current

Each IGBT collector current (peak)

Collector dissipation

Junction temperature

V

V

V

A

A

W

°C

°C, unless otherwise noted)

INVERTER PART

Condition

Symbol

Parameter

Ratings

Unit

CONTROL (PROTECTION) PART

Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150

Note1: In the recommended external protection circuit, please select the RC time constant in the range 1.5~2.0

µs.

2: To prevent erroneous protection operation, the wiring of A, B, C should be as short as possible.

Drive circuit

Drive circuit

Protection circuit

W

V

U

B

C

CIN

A

P

N1

N

C

R

Shunt Resistor

External protection circuit

DIP-IPM

SC Protection

Trip Level

µs)

2

0

Short Circuit Protective Function (SC) :

SC protection is achieved by sensing the L-side DC-Bus current (through the external

shunt resistor) after allowing a suitable filtering time (defined by the RC circuit).

When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned

OFF and a fault signal (Fo) is output. Since the SC fault may be repetitive, it is

recommended to stop the system when the Fo signal is received and check the fault.

Collector current

waveform

(Note 1)

(Note 2)

Fig. 6 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT