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PS21961-4C Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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PS21961-4C Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 10 page MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module> PS21961-4/-4A/-4C/-4W TRANSFER-MOLD TYPE INSULATED TYPE Sep. 2007 5 2.20 2.30 2.00 1.50 — 0.60 2.00 0.80 1 10 4.7 mA V Tj = 25 °C Tj = 125 °C IC = 3A, Tj = 25 °C IC = 3A, Tj = 125 °C VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Condition Symbol Parameter Limits Inverter RC-IGBT part (per 1/6 module) Rth(j-c)Q Min. THERMAL RESISTANCE Typ. Max. —— Unit Tj = 25 °C, –IC = 3A, VIN = 0V Condition Symbol Parameter Limits Min. Typ. Max. — — — 0.50 — — — — — — Unit ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise noted) INVERTER PART Collector-emitter saturation voltage FWD forward voltage Junction to case thermal resistance (Note 3) VD = VDB = 15V VIN = 5V Switching times VCC = 300V, VD = VDB = 15V IC = 3A, Tj = 125 °C, VIN = 0 ↔ 5V Inductive load (upper-lower arm) Collector-emitter cut-off current VCE = VCES 1.70 1.80 1.50 0.95 0.30 0.35 1.40 0.50 — — V µs µs µs µs µs °C/W Note 3 : Grease with good thermal conductivity and long-term quality should be applied evenly with +100 µm~+200µm on the contacting sur- face of DIP-IPM and heat-sink. The contacting thermal resistance between DIP-IPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3 °C/W when the grease thickness is 20µm and the thermal conductivity is 1.0W/m·k. Note 2: TC measurement point DIP-IPM RC-IGBT chip position Power terminals Control terminals TC point Heat sink side 11.6mm 3mm 400 –20~+100 –40~+125 1500 VD = 13.5~16.5V, Inverter part Tj = 125 °C, non-repetitive, less than 2µs (Note 2) 60Hz, Sinusoidal, 1 minute, All connected pins to heat-sink plate VCC(PROT) TC Tstg Viso Symbol Ratings Unit Supply voltage self protection limit (short circuit protection capability) Module case operation temperature Storage temperature Isolation voltage V °C °C Vrms TOTAL SYSTEM Parameter Condition |
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