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CXK5V8512TM- Datasheet(PDF) 1 Page - Sony Corporation |
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CXK5V8512TM- Datasheet(HTML) 1 Page - Sony Corporation |
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1 / 10 page  – 1 – CXK5V8512TM -85LLX/10LLX E95716-PP 65536-word × 8-bit High Speed CMOS Static RAM Description The CXK5V8512TM is a high speed CMOS static RAM organized as 65536-words by 8-bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, and special feature are low power consumption, high speed. The CXK5V8512TM is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Fast access time: (Access time) -85LLX 85ns (Max.) -10LLX 100ns (Max.) • Low standby current: 14µA (Max.) • Low data retention current: 12µA (Max.) • Single 3.3V supply: 3.3V ± 0.3V • Low voltage data retention: 2.0V (Min.) • Package 8mm × 20mm 32 pin TSOP package Function 65536-word × 8-bit static RAM Structure Silicon gate CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. 32 pin TSOP (Plastic) VCC GND CE1 CE2 Row Decoder Buffer Buffer I/O Buffer A15 A13 A8 A11 A9 A7 A6 A5 A14 A12 A4 A3 A10 A0 A1 OE WE Buffer I/O Gate Column Decoder Memory Matrix 1024 × 512 A2 I/O1 I/O8 Block Diagram For the availability of this product, please contact the sales office. |
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