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E95715-ST

131072-word

× 8-bit High Speed CMOS Static RAM

Description

The CXK5V81000ATM is a high speed CMOS

static RAM organized as 131072-words by 8-bits.

A

polysilicon

TFT

cell

technology

realized

extremely low stand-by current and higher data

retention stability.

Operating on a single 3.3V supply, and special

feature are low power consumption, high speed.

The CXK5V81000ATM is a suitable RAM for

portable equipment with battery back up.

Features

• Extended operating temperature range:

–25 to +85°C

• Fast access time:

(Access time)

-85LLX

85ns (Max.)

-10LLX

100ns (Max.)

• Low standby current:

28µA (Max.)

• Low data retention current: 24µA (Max.)

• Single 3.3V supply:

3.3V ± 0.3V

• Low voltage data retention: 2.0V

(Min.)

• Package

8mm

× 20mm 32 pin TSOP package

Function

131072-word x 8-bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Block Diagram

Memory

Matrix

1024

× 512

I/O Gate

Column

Decoder

Row

Decoder

Buffer

Buffer

Buffer

I/O Buffer

GND

I/O1 I/O8

OE

WE

CE1

A10

A11

A9

A8

A15

A16

A14

A12

A7

A5

A6

A4

A3

A1

A0

A13

A2

CE2

32 pin TSOP (Plastic)

For the availability of this product, please contact the sales office.