CXK5V81000ATM datasheet(9/10 Pages) SONY | 131072-word X 8-bit High Speed CMOS Static RAM

Part No.	CXK5V81000ATM

Description	131072-word X 8-bit High Speed CMOS Static RAM

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Manufacturer	SONY [Sony Corporation]

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CXK5V81000ATM

∗1

–25 to +85°C

–25 to +70°C

+25°C

VCC = 2.0 to 3.6V

∗1

Chip disable to data retention mode

Data retention voltage

Data retention setup time

Recovery time

VDR

ICCDR1

ICCDR2

tCDRS

tR

2.0

—

0

5

—

0.4

0.48

∗2

—

3.6

24

12

—

28

—

V

µA

ns

ms

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Data Retention Characteristics

(Ta = –25 to +85°C)

∗1 CE1 ≥ Vcc – 0.2V, CE2 ≥ Vcc – 0.2V (CE1 control) or CE2 ≤ 0.2V (CE2 control)

∗2 VCC = 3.3V, Ta = 25°C

Data retention current

VCC = 3.0V

∗1

Data retention waveform

• Low supply voltage data retention waveform (1) (CE1 control)

VCC

4.5V

2.2V

VDR

CE1

GND

tCDRS

Data retention mode

CE1 ≥ VCC – 0.2V

• Low supply voltage data retention waveform (2) (CE2 control)

tR

Data retention mode

tR

tCDRS

CE2 ≤ 0.2V

VCC

4.5V

0.4V

CE2

GND

VDR

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CXK5V81000ATM Datasheet(PDF) 9 Page - Sony Corporation

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