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CXK5V81000ATM Datasheet(PDF) 9 Page - Sony Corporation

Part No. CXK5V81000ATM
Description  131072-word X 8-bit High Speed CMOS Static RAM
Download  10 Pages
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXK5V81000ATM Datasheet(HTML) 9 Page - Sony Corporation

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– 9 –
CXK5V81000ATM
1
–25 to +85°C
–25 to +70°C
+25°C
VCC = 2.0 to 3.6V
1
Chip disable to data retention mode
Data retention voltage
Data retention setup time
Recovery time
VDR
ICCDR1
ICCDR2
tCDRS
tR
2.0
0
5
0.4
0.48
2
3.6
24
12
28
V
µA
µA
ns
ms
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Data Retention Characteristics
(Ta = –25 to +85°C)
1 CE1 ≥ Vcc – 0.2V, CE2 ≥ Vcc – 0.2V (CE1 control) or CE2 ≤ 0.2V (CE2 control)
2 VCC = 3.3V, Ta = 25°C
Data retention current
VCC = 3.0V
1
Data retention waveform
• Low supply voltage data retention waveform (1) (CE1 control)
VCC
4.5V
2.2V
VDR
CE1
GND
tCDRS
Data retention mode
CE1 ≥ VCC – 0.2V
• Low supply voltage data retention waveform (2) (CE2 control)
tR
Data retention mode
tR
tCDRS
CE2 ≤ 0.2V
VCC
4.5V
0.4V
CE2
GND
VDR


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