CXK5V81000ATM datasheet(8/10 Pages) SONY | 131072-word X 8-bit High Speed CMOS Static RAM

Part No.	CXK5V81000ATM

Description	131072-word X 8-bit High Speed CMOS Static RAM

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Manufacturer	SONY [Sony Corporation]

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CXK5V81000ATM

Address

OE

tWC

tAW

Data valid

tCW

tWR1

tWP

tDW

tDH

High impedance

CE1

WE

Data out

Data in

tAS

tCW

(

∗3)

CE2

∗1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.

∗2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

∗3 tWR1 is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until

the end of the write cycle.

• Write cycle (3) : CE2 control

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