CXK5T8512TM-10LLX datasheet(8/10 Pages) SONY

Part #	CXK5T8512TM-10LLX

Description	65536-word X 8-bit High Speed CMOS Static RAM

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Manufacturer	SONY [Sony Corporation]

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CXK5T8512TM/TN

• Write cycle (3) : CE2 control

Address

OE

tWC

tAW

Data valid

tCW

tWR1

tWP

tDW

tDH

High impedance

CE1

WE

Data out

Data in

tAS

tCW

(

∗3)

CE2

∗1 Write is executed when both CE1 and WE are at low and CE2 is at high simultaneously.

∗2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.

∗3 t

WR1

is tested from either the rising edge of CE1 or the falling edge of CE2, whichever comes earlier, until

the end of the write cycle.

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