PS21767-V datasheet(7/8 Pages) MITSUBISHI

Part #	PS21767-V

Description	Dual-In-Line Package Intelligent Power Module

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>

PS21767-V

TRANSFER-MOLD TYPE

INSULATED TYPE

Aug. 2007

7

MCU

10k

Ω

UP,VP,WP,UN,VN,WN

VNC(Logic)

Fo

DIP-IPM

5V line

[C] Under-Voltage Protection (Upper-arm, UVDB)

c1. Control supply voltage rises : After the voltage level reaches UVDBr, the circuits start to operate.

c2. Protection circuit state reset : IGBT ON and carrying current.

c3. Normal operation : IGBT ON and carrying current.

c4. Under-voltage trip (UVDBt).

c5. IGBT OFF inspite of control input condition, but there is no FO signal output.

c6. Under-voltage reset (UVDBr).

c7. Normal operation : IGBT ON and carrying current.

Fig. 5 RECOMMENDED MCU I/O INTERFACE CIRCUIT

Note : RC coupling at each input (parts shown dotted) may change depending on the PWM control scheme used in

the application and the wiring impedance of the application’s printed circuit board.

The DIP-IPM input signal section integrates a 2.5k

Ω(min) pull-down resistor. Therefore, when using a external

filtering resistor, care must be taken to satisfy the turn-on threshold voltage requirement.

Fig. 6 RECOMMENDED WIRING AROUND THE SHUNT RESISTOR

Control input

Protection circuit state

Control supply voltage VDB

Output current Ic

Fault output Fo

High-level (no fault output)

UVDBr

RESET

SET

RESET

UVDBt

c1

c3

c4

c5

c6

c7

c2

NW

VNC

NV

NU

DIP-IPM

The GND wiring from VNO, VNC should be

as close to the shunt resistors as possible

VNO

Each wiring inductance should be less than 10nH

Shunt resistor

Equivalent to the inductance of a copper

pattern in dimension of width=3mm,

thickness=100

µm, length=17mm

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PS21767-V Datasheet(PDF) 7 Page - Mitsubishi Electric Semiconductor

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