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PE96727-PS

65536-word

× 8-bit High Speed CMOS Static RAM

Description

The CXK5T8512TM/TN is a high speed CMOS

static RAM organized as 65536-words by 8-bits.

Special feature are low power consumption and

high speed.

The CXK5T8512TM/TN is a suitable RAM for

portable equipment with battery back up.

Features

• Extended operating temperature range:

–25 to +85°C

• Wide supply voltage range operation: 2.7 to 3.6V

• Fast access time:

(Access time)

3.0V operation

CXK5T8512TM/TN-10LLX 100ns (Max.)

CXK5T8512TM/TN-12LLX 120ns (Max.)

3.3V operation

CXK5T8512TM/TN-10LLX

85ns (Max.)

CXK5T8512TM/TN-12LLX 100ns (Max.)

• Low standby current:

14µA (Max.)

• Low data retention current: 12µA (Max.)

• Low power data retention:

2.0V

(Min.)

• Package line-up

CXK5T8512TM

8mm

× 20mm 32 pin TSOP package

CXK5T8512TN

8mm

× 13.4mm 32 pin TSOP package

Function

65536-word

× 8-bit static RAM

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

GND

CE1

CE2

Row

Decoder

Buffer

Buffer

I/O Buffer

A15

A13

A8

A11

A9

A7

A6

A5

A14

A12

A4

A3

A10

A0

A1

OE

WE

Buffer

I/O Gate

Column

Decoder

Memory

Matrix

1024

× 512

A2

I/O1

I/O8

Block Diagram

CXK5T8512TM

32 pin TSOP (Plastic)

CXK5T8512TN

32 pin TSOP (Plastic)

Preliminary

For the availability of this product, please contact the sales office.