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CXK5T8512TM Datasheet(PDF) 1 Page - Sony Corporation |
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CXK5T8512TM Datasheet(HTML) 1 Page - Sony Corporation |
1 / 10 page ![]() – 1 – CXK5T8512TM/TN -10LLX/12LLX PE96727-PS 65536-word × 8-bit High Speed CMOS Static RAM Description The CXK5T8512TM/TN is a high speed CMOS static RAM organized as 65536-words by 8-bits. Special feature are low power consumption and high speed. The CXK5T8512TM/TN is a suitable RAM for portable equipment with battery back up. Features • Extended operating temperature range: –25 to +85°C • Wide supply voltage range operation: 2.7 to 3.6V • Fast access time: (Access time) 3.0V operation CXK5T8512TM/TN-10LLX 100ns (Max.) CXK5T8512TM/TN-12LLX 120ns (Max.) 3.3V operation CXK5T8512TM/TN-10LLX 85ns (Max.) CXK5T8512TM/TN-12LLX 100ns (Max.) • Low standby current: 14µA (Max.) • Low data retention current: 12µA (Max.) • Low power data retention: 2.0V (Min.) • Package line-up CXK5T8512TM 8mm × 20mm 32 pin TSOP package CXK5T8512TN 8mm × 13.4mm 32 pin TSOP package Function 65536-word × 8-bit static RAM Structure Silicon gate CMOS IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. VCC GND CE1 CE2 Row Decoder Buffer Buffer I/O Buffer A15 A13 A8 A11 A9 A7 A6 A5 A14 A12 A4 A3 A10 A0 A1 OE WE Buffer I/O Gate Column Decoder Memory Matrix 1024 × 512 A2 I/O1 I/O8 Block Diagram CXK5T8512TM 32 pin TSOP (Plastic) CXK5T8512TN 32 pin TSOP (Plastic) Preliminary For the availability of this product, please contact the sales office. |