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PS219B4-ST Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part # PS219B4-ST
Description  Dual-In-Line Package Intelligent Power Module
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

PS219B4-ST Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

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< Dual-In-Line Package Intelligent Power Module >
PS219B4-S/-AS/-CS/-ST/-AST/-CST
TRANSFER MOLDING TYPE
INSULATED TYPE
Publication Date : November 2011
3
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Tj= 25°C
-
1.50
2.00
VCE(sat)
Collector-emitter saturation
voltage
VD=VDB = 15V, VIN= 5V, IC= 15A
Tj= 125°C
-
1.60
2.10
V
VEC
FWDi forward voltage
VIN= 0V, -IC= 15A
-
1.70
2.20
V
ton
0.85
1.45
2.05
μs
tC(on)
-
0.45
0.70
μs
toff
-
1.50
2.10
μs
tC(off)
-
0.35
0.60
μs
trr
Switching times
VCC= 300V, VD= VDB= 15V
IC= 15A, Tj= 125°C, VIN= 0
↔5V
Inductive Load (upper-lower arm)
-
0.30
-
μs
Tj= 25°C
-
-
1
ICES
Collector-emitter cut-off
current
VCE=VCES
Tj= 125°C
-
-
10
mA
CONTROL (PROTECTION) PART
Limits
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
VD=15V, VIN=0V
-
-
2.80
ID
Total of VP1-VNC, VN1-VNC
VD=15V, VIN=5V
-
-
2.80
VD=VDB=15V, VIN=0V
-
-
0.10
IDB
Circuit current
Each part of VUFB-U,
VVFB-V, VWFB-W
VD=VDB=15V, VIN=5V
-
-
0.10
mA
VSC(ref)
Short circuit trip level
VD = 15V
(Note 3)
0.43
0.48
0.53
V
UVDBt
Trip level
7.0
10.0
12.0
V
UVDBr
P-side Control supply
under-voltage protection(UV)
Reset level
7.0
10.0
12.0
V
UVDt
Trip level
10.3
-
12.5
V
UVDr
N-side Control supply
under-voltage protection(UV)
Tj ≤125°C
Reset level
10.8
-
13.0
V
LVIC Temperature=90
C
2.63
2.77
2.91
V
VOT
Temperature Output
(-S/-AS/-CS only)
Pull down R=5kΩ (Note 4)
LVIC Temperature=25
C
0.88
1.13
1.39
V
OTt
VD = 15V
Trip level
100
120
140
°C
OTrh
Overt temperature protection
(OT, -ST/-AST/-CST only) (Note5)
Detect LVIC temperature
Hysteresis of trip-reset
-
10
-
°C
VFOH
VSC = 0V, FO terminal pulled up to 5V by 10kΩ
4.9
-
-
V
VFOL
Fault output voltage
VSC = 1V, IFO = 1mA
-
-
0.95
V
tFO
Fault output pulse width
(Note 6)
20
-
-
μs
IIN
Input current
VIN = 5V
0.70
1.00
1.50
mA
Vth(on)
ON threshold voltage
-
2.10
2.60
Vth(off)
OFF threshold voltage
0.80
1.30
-
Vth(hys)
ON/OFF threshold
hysteresis voltage
Applied between UP, VP, WP, UN, VN, WN-VNC
0.35
0.65
-
V
VF
Bootstrap Di forward voltage
IF=10mA including voltage drop by limiting resistor
(Note 7)
1.1
1.7
2.3
V
R
Built-in limiting resistance
Included in bootstrap Di
80
100
120
Note 3 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating.
Note 4 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that
user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. VOT output characteristics is described in Fig. 3.
5 : When the LVIC temperature exceeds OT trip temperature level(OTt), OT protection works and Fo outputs. In that case if the heat sink dropped off or fixed
loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150
C).
6 : Fault signal Fo outputs when SC, UV or OT protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed
width (=minimum 20μs), but at UV or OT failure, Fo outputs continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.)
7 : The characteristics of bootstrap Di is described in Fig.2.
Fig. 2 Characteristics of bootstrap Di VF-IF curve (@Ta=25C) including voltage drop by limiting resistor (Right chart is enlarged chart.)
0
20
40
60
80
100
120
140
160
0123456789 10 11 12 13 14 15
V
F [V]
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
F [V]


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