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PS219B4-ST Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PS219B4-ST Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 13 page < Dual-In-Line Package Intelligent Power Module > PS219B4-S/-AS/-CS/-ST/-AST/-CST TRANSFER MOLDING TYPE INSULATED TYPE Publication Date : November 2011 3 ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Limits Symbol Parameter Condition Min. Typ. Max. Unit Tj= 25°C - 1.50 2.00 VCE(sat) Collector-emitter saturation voltage VD=VDB = 15V, VIN= 5V, IC= 15A Tj= 125°C - 1.60 2.10 V VEC FWDi forward voltage VIN= 0V, -IC= 15A - 1.70 2.20 V ton 0.85 1.45 2.05 μs tC(on) - 0.45 0.70 μs toff - 1.50 2.10 μs tC(off) - 0.35 0.60 μs trr Switching times VCC= 300V, VD= VDB= 15V IC= 15A, Tj= 125°C, VIN= 0 ↔5V Inductive Load (upper-lower arm) - 0.30 - μs Tj= 25°C - - 1 ICES Collector-emitter cut-off current VCE=VCES Tj= 125°C - - 10 mA CONTROL (PROTECTION) PART Limits Symbol Parameter Condition Min. Typ. Max. Unit VD=15V, VIN=0V - - 2.80 ID Total of VP1-VNC, VN1-VNC VD=15V, VIN=5V - - 2.80 VD=VDB=15V, VIN=0V - - 0.10 IDB Circuit current Each part of VUFB-U, VVFB-V, VWFB-W VD=VDB=15V, VIN=5V - - 0.10 mA VSC(ref) Short circuit trip level VD = 15V (Note 3) 0.43 0.48 0.53 V UVDBt Trip level 7.0 10.0 12.0 V UVDBr P-side Control supply under-voltage protection(UV) Reset level 7.0 10.0 12.0 V UVDt Trip level 10.3 - 12.5 V UVDr N-side Control supply under-voltage protection(UV) Tj ≤125°C Reset level 10.8 - 13.0 V LVIC Temperature=90 C 2.63 2.77 2.91 V VOT Temperature Output (-S/-AS/-CS only) Pull down R=5kΩ (Note 4) LVIC Temperature=25 C 0.88 1.13 1.39 V OTt VD = 15V Trip level 100 120 140 °C OTrh Overt temperature protection (OT, -ST/-AST/-CST only) (Note5) Detect LVIC temperature Hysteresis of trip-reset - 10 - °C VFOH VSC = 0V, FO terminal pulled up to 5V by 10kΩ 4.9 - - V VFOL Fault output voltage VSC = 1V, IFO = 1mA - - 0.95 V tFO Fault output pulse width (Note 6) 20 - - μs IIN Input current VIN = 5V 0.70 1.00 1.50 mA Vth(on) ON threshold voltage - 2.10 2.60 Vth(off) OFF threshold voltage 0.80 1.30 - Vth(hys) ON/OFF threshold hysteresis voltage Applied between UP, VP, WP, UN, VN, WN-VNC 0.35 0.65 - V VF Bootstrap Di forward voltage IF=10mA including voltage drop by limiting resistor (Note 7) 1.1 1.7 2.3 V R Built-in limiting resistance Included in bootstrap Di 80 100 120 Ω Note 3 : SC protection works only for N-side IGBT. Please select the external shunt resistance such that the SC trip-level is less than 1.7 times of the current rating. Note 4 : DIPIPM don't shutdown IGBTs and output fault signal automatically when temperature rises excessively. When temperature exceeds the protective level that user defined, controller (MCU) should stop the DIPIPM. Temperature of LVIC vs. VOT output characteristics is described in Fig. 3. 5 : When the LVIC temperature exceeds OT trip temperature level(OTt), OT protection works and Fo outputs. In that case if the heat sink dropped off or fixed loosely, don't reuse that DIPIPM. (There is a possibility that junction temperature of power chips exceeded maximum Tj(150 C). 6 : Fault signal Fo outputs when SC, UV or OT protection works. Fo pulse width is different for each protection modes. At SC failure, Fo pulse width is a fixed width (=minimum 20μs), but at UV or OT failure, Fo outputs continuously until recovering from UV or OT state. (But minimum Fo pulse width is 20μs.) 7 : The characteristics of bootstrap Di is described in Fig.2. Fig. 2 Characteristics of bootstrap Di VF-IF curve (@Ta=25C) including voltage drop by limiting resistor (Right chart is enlarged chart.) 0 20 40 60 80 100 120 140 160 0123456789 10 11 12 13 14 15 V F [V] 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V F [V] |
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Similar Description - PS219B4-ST |
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