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ECJ-2VB2A104K Datasheet(PDF) 2 Page - RF Micro Devices |
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ECJ-2VB2A104K Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 10 page 2 of 10 RFHA1025 DS120928 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD)150 V Gate Voltage (VG)-8 to 2 V Gate Current (IG)155 mA Ruggedness (VSWR) 10:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TC)-40 to +85 °C Operating Junction Temperature (TJ)250 °C Human Body Model Class 1B MTTF (TJ < 200°C, 95% Confidence Limits)* 1.8E + 07 Hours MTTF (TJ < 250°C, 95% Confidence Limits)* 1.1E + 05 Hours Thermal Resistance, RTH (junction to case): TC = 85°C, DC bias only TC = 85°C, 100s pulse, 10% duty cycle TC = 85°C, 1ms pulse, 10% duty cycle 0.90 0.18 0.34 °C/W * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Parameter Specification Unit Condition Min. Typ. Max. Recommended Operating Conditions Drain Voltage (VDSQ)50 V Gate Voltage (VGSQ)-8 -3 -2 V Drain Bias Current 440 mA Frequency of Operation 960 1215 MHz DC Functional Test IG (OFF) – Gate Leakage 2 mA VG = -8V, VD = 0V ID (OFF) – Drain Leakage 2.5 mA VG = -8V, VD = 50V VGS (TH) – Threshold Voltage -3.5 V VD = 50V, ID = 40mA VDS (ON) – Drain Voltage at High Current 0.28 V VG = 0V, ID = 1.5A RF Functional Test [1], [2] Small Signal Gain 17 dB f = 960MHz, PIN = 28dBm Power Gain 13 14.2 dB f = 960MHz, PIN = 41dBm Input Return Loss -7.5 -5 dB Output Power 54 55.2 dBm Drain Efficiency 50 55 % Small Signal Gain 17 dB f = 1215MHz, PIN = 28dBm Power Gain 13 13.6 dB f = 1215MHz, PIN = 41dBm Input Return Loss -7 -5 dB Output Power 54 54.6 dBm Drain Efficiency 50 59 % Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. |
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