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STPS40L45C-Y Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS40L45C-Y Datasheet(HTML) 3 Page - STMicroelectronics |
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STPS40L45C-Y Characteristics Doc ID 023224 Rev 1 3/7 Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature ( δ = 0.5, per diode) 0 2 4 6 8 1012 1416 18202224 0 2 4 6 8 10 12 14 16 PF(AV)(W) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 T δ = tp /T tp IF(AV)(A) 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 IF(AV)(A) T δ = tp /T tp Tamb(°C) Rth(j-a) = Rth(j-c) Rth(j-a) = 15 °C/W Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus junction temperature 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(tp) P (1 µs) ARM ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 P(T ) P (25 °C) ARM j ARM T (°C) j Figure 5. Non repetitive surge peak forward current versus overload duration (maximum values, per diode) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration 1E-3 1E-2 1E-1 1E+0 0 25 50 75 100 125 150 175 200 225 250 t(s) IM(A) Tc = 25 °C Tc = 75 °C Tc = 125 °C 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 T δ = tp /T tp Zth(j-c)/Rth(j-c) tp(s) Single pulse δ = 0.5 δ = 0.2 δ = 0.1 |
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