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STPS40L45C-Y Datasheet(PDF) 2 Page - STMicroelectronics

Part No. STPS40L45C-Y
Description  7Automotive power Schottky rectifier
Download  7 Pages
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS40L45C-Y Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS40L45C-Y
2/7
Doc ID 023224 Rev 1
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c).
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current
Tc =130 °C
δ = 0.5
per diode
per device
20
40
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
230
A
IRRM
Repetitive peak reverse current
tp = 2 µs square F = 1 kHz
2
A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
3
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
8100
W
Tstg
Storage temperature range
-65 to + 150
°C
Tj
Operating junction temperature (1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to + 150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth (j-c) Junction to case
Per diode
Total
1.5
0.8
°C/W
Rth(c)
Coupling
0.1
°C/W
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.28 x IF(AV) + 0.0105 IF
2
(RMS)
Reverse leakage
current
Tj = 25 °C
VR = VRRM
0.6
mA
Tj = 125 °C
140
280
mA
VF
(1)
Forward voltage drop
Tj = 25 °C
IF = 20 A
0.53
V
Tj = 125 °C
IF = 20 A
0.42
0.49
Tj = 25 °C
IF = 40 A
0.69
Tj = 125 °C
IF = 40 A
0.6
0.7
dPtot
dTj
<
1
Rth(j-a)


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