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STPS40L45C-Y Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS40L45C-Y Datasheet(HTML) 2 Page - STMicroelectronics |
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Characteristics STPS40L45C-Y 2/7 Doc ID 023224 Rev 1 1 Characteristics When the diodes 1 and 2 are used simultaneously : ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c). Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current Tc =130 °C δ = 0.5 per diode per device 20 40 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 230 A IRRM Repetitive peak reverse current tp = 2 µs square F = 1 kHz 2 A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C 8100 W Tstg Storage temperature range -65 to + 150 °C Tj Operating junction temperature (1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to + 150 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistances Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode Total 1.5 0.8 °C/W Rth(c) Coupling 0.1 °C/W Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.28 x IF(AV) + 0.0105 IF 2 (RMS) Reverse leakage current Tj = 25 °C VR = VRRM 0.6 mA Tj = 125 °C 140 280 mA VF (1) Forward voltage drop Tj = 25 °C IF = 20 A 0.53 V Tj = 125 °C IF = 20 A 0.42 0.49 Tj = 25 °C IF = 40 A 0.69 Tj = 125 °C IF = 40 A 0.6 0.7 dPtot dTj < 1 Rth(j-a) |
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