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CXK5T81000ATN Datasheet(PDF) 3 Page - Sony Corporation

Part No. CXK5T81000ATN
Description  131072-word X 8-bit High Speed CMOS Static RAM
Download  10 Pages
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5T81000ATN Datasheet(HTML) 3 Page - Sony Corporation

 
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– 3 –
CXK5T81000ATN/AYN
Input leakage current
Output leakage current
Operating power supply
current
ILI
ILO
ICC1
VIN = GND to VCC
CE1 = VIH or CE2 = VIL or
OE = VIH or WE = VIL
VI/O = GND to VCC
CE1 = VIL, CE2 = VIH
VIN = VIH or VIL
IOUT = 0mA
10LLX
12LLX
–25 to +85°C
–25 to +70°C
+25°C
–1
–1
—5
10
0.48
0.12
28
14
1.4
µA
mA
1
25∗2
25
+1
+1
3
35∗3
35
µA
µA
mA
mA
mA
Item
Symbol
Min.
Typ.∗1
Max.
Unit
Test conditions
Electrical Characteristics
• DC Characteristics
(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)
1 V
CC
= 3.3V, Ta = 25°C
2 I
CC2
= 30mA for 3.3V operation (VCC = 3.3V ± 0.3V)
3 I
CC2
= 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)
Average operating current
Output high voltage
Output low voltage
Standby current
ICC2
ICC3
ISB1
ISB2
VOH
VOL
Min. cycle
duty = 100%
IOUT = 0mA
Cycle time 1µs
duty = 100%
IOUT = 0mA
CE1
≤ 0.2V
CE2
≥ Vcc – 0.2V
VIL
≤ 0.2V
VIH
≥ Vcc – 0.2V
CE1 = VIH or CE2 = VIL
IOL = 2.0mA
2.4
0.4
V
V
IOH = –2.0mA
CE2
≤ 0.2V
CE1
≥ Vcc – 0.2V
or
{
CE2
≥ Vcc – 0.2V
Input capacitance
I/O capacitance
Item
Symbol Test conditions
Min.
Typ.
Max.
Unit
CIN
CI/O
8
10
pF
pF
VIN = 0V
VI/O = 0V
I/O capacitance
(Ta = 25°C, f = 1MHz)
Note) This parameter is sampled and is not 100% tested.


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