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CXK5T16100TM- Datasheet(PDF) 8 Page - Sony Corporation

Part No. CXK5T16100TM-
Description  65536-word x 16-bit High Speed CMOS Static RAM
Download  10 Pages
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXK5T16100TM- Datasheet(HTML) 8 Page - Sony Corporation

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CXK5T16100TM
Address
OE
tWC
tAW
Data valid
tWP
tDW
tDH
High impedance
WE
Data out
Data in
tCW
UB, LB
tAS
tBW
tWR1
CE
(∗3)
• Write cycle (3) : UB, LB control
∗1 Write is executed when all of the CE, WE and (UB and, or LB) are at low simultaneously.
∗2 Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
∗3 t
WR1
(for I/O1 to 8) is tested from either the rising edge of CE or LB, whichever comes earlier, until the end
of the write cycle.
tWR1 (for I/O9 to 16) is tested from either the rising edge of CE or UB, whichever comes earlier, until the end
of the write cycle.


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