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CXK5T16100TM- Datasheet(PDF) 5 Page - Sony Corporation

Part No. CXK5T16100TM-
Description  65536-word x 16-bit High Speed CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5T16100TM- Datasheet(HTML) 5 Page - Sony Corporation

 
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CXK5T16100TM
Write cycle time
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Data to write time overlap
Data hold from write time
Write pulse width
Address setup time
Write recovery time (WE)
Write recovery time (CE, UB, LB)
Output active from end of write
Write to output in high Z
Item
VCC = 2.7 to 3.6V
tRC
tAA
tCO
tBO
tOE
tOH
tLZ
tOLZ
tBLZ
tHZ1
tOHZ1
tBHZ1
120
10
10
5
5
120
120
60
60
40
35
35
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read cycle time
Address access time
Chip enable access time (CE)
Byte enable access time (UB, LB)
Output enable to output valid
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Byte enable to output in low Z (UB, LB)
Chip disable to output in high Z (CE)
Chip disable to output in high Z (OE)
Byte disable to output in high Z (UB, LB)
• Read cycle (WE = “H”)
1 t
HZ
,
tOHZ and tBHZ are defined as the time required for outputs to turn to high impedance state and are not
referred to as output voltage levels.
Min.
Max.
VCC = 3.3V ± 0.3V
100
10
10
5
5
100
100
50
50
40
35
35
Min.
Max.
Unit
Symbol
• Write cycle
2 t
WHZ
is defined as the time required for outputs to turn to high impedance state and is not referred to as
output voltage levels.
Item
VCC = 2.7 to 3.6V
tWC
tAW
tCW
tBW
tDW
tDH
tWP
tAS
tWR
tWR1
tOW
tWHZ2
120
100
100
100
50
0
70
0
5
5
5
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Min.
Max.
VCC = 3.3V ± 0.3V
100
80
80
80
40
0
70
0
5
5
5
40
Min.
Max.
Unit
Symbol


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