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RF3928BTR13 Datasheet(PDF) 2 Page - RF Micro Devices |
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RF3928BTR13 Datasheet(HTML) 2 Page - RF Micro Devices |
2 / 11 page 2 of 11 RF3928B DS120503 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com. Absolute Maximum Ratings Parameter Rating Unit Drain Source Voltage 150 V Gate Source Voltage -8 to +2 V Gate Current (IG) 155 mA Operational Voltage 65 V Ruggedness (VSWR) 3:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C Operating Junction Temperature (TJ) 250 °C Human Body Model Class 1A MTTF (TJ < 200°C) MTTF (TJ < 250°C) 3.0E + 06 1.4E + 05 Hours Thermal Resistance, Rth (junction to case) TC=85°C, DC bias only TC=85°C, 100s pulse, 10% duty cycle TC=85°C, 300s pulse, 10% duty cycle 0.90 0.18 0.25 °C/W * MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS<(TJ–TC)/RTH J-C and TC=TCASE Parameter Specification Unit Condition Min. Typ. Max. Recommended Operating Condition Drain Voltage (VDSQ)65 V Gate Voltage (VGSQ) -8-3 -2 V Drain Bias Current 440 mA Frequency of Operation 2800 3400 MHz DC Functional Test IG (OFF) – Gate Leakage 2 mA VG=-8V, VD=0V ID (OFF) – Drain Leakage 2 mA VG=-8V, VD=65V VGS (th) – Threshold Voltage -3.5 V VD=65V, ID=40mA VDS (on) – Drain Voltage at high current 0.22 V VG=0V, ID=1.5A RF Functional Test [1, 2] Small Signal Gain 13 dB F=2900MHz, PIN=30dBm Power Gain 11.2 11.8 dB F=2900MHz, PIN=44dBm Input Return Loss -6 dB F=2900MHz, PIN=30dBm Output Power 55.3 56 dBm F=2900MHz, PIN=44dBm Drain Efficiency 45 50 % Small Signal Gain 13 dB F=3150MHz, PIN=30dBm Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. |
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