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CXK5B41020TM- Datasheet(PDF) 1 Page - Sony Corporation

Part No. CXK5B41020TM-
Description  262144-word x 4-bit High Speed Bi-CMOS Static RAM
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5B41020TM- Datasheet(HTML) 1 Page - Sony Corporation

   
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CXK5B41020TM -12
E93726-ST
262144-word
× 4-bit High Speed Bi-CMOS Static RAM
Description
CXK5B41020TM is a high speed 1M bit Bi-CMOS
static RAM organized as 262144 words by 4 bits.
Operating on a single 3.3V supply this asynchronous
IC is suitable for use in high speed and low power
applications.
Features
• Single 3.3V power supply: 3.3V±0.3V
• Fast access time
12ns (Max.)
• Low standby current:
10mA (Max.)
• Low power operation
792mW (Max.)
• Package line-up
Dual Vcc/Vss
CXK5B41020TM 400mil 32pin TSOP package
Function
262144 word
× 4-bit static RAM
Structure
Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
32 pin TSOP (PIastic)
Buffer
A6
A13
A5
A4
A3
A0
A2
A1
Buffer
Row
Decoder
Memory
Matrix
256
× 4096
I/O Buffer
I/O1 I/O4
Vcc
GND
A16
A17
A10
A9
A14
A15
A12
A11
WE
OE
CE
NC
1
A3
2
A2
3
A1
4
5
6
I/O1
7
Vcc
8
GND 9
I/O2 10
WE
11
12
A16 13
A15 14
A14 15
NC
16
A4
32
A5
31
A6
30
A7
29
A8
28
27
I/O4
26
GND
25
Vcc
24
I/O3
23
A9
22
A10
21
A11
20
A12
19
A13
18
NC
17
A7
I/O Gate
Column
Decoder
A17
A0
CE
OE
A8
Block Diagram
Pin Configuration (Top View)
Pin Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3V power supply
Ground
No connection
A0 to A17
I/O1 to I/O4
CE
WE
OE
VCC
GND
NC
Symbol
Description
For the availability of this product, please contact the sales office.


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