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PS21A7A Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor |
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PS21A7A Datasheet(HTML) 1 Page - Mitsubishi Electric Semiconductor |
1 / 10 page 1 MITSUBISHI SEMICONDUCTOR < Dual-In-Line Package Intelligent Power Module> PS21A7A TRANSFER-MOLD TYPE INSULATED TYPE March 2011 PS21A7A MAIN FUNCTION AND RATINGS 3 phase inverter with N-side open emitter structure 600V / 75A (CSTBT) APPLICATION AC100 ~ 200Vrms class, motor control INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS ● For P-side : Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection ● For N-side : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC), ● Fault signaling : Corresponding to SC fault (N-side IGBT), UV fault (N-side supply) ● Temperature monitoring : Analog output of LVIC temperature ● Input interface : 3, 5V line, Schmitt trigger receiver circuit (High Active) ● UL Approved : File No. E80276 MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol Parameter Condition Ratings Unit VCC Supply voltage Applied between P-NU,NV,NW 450 V VCC(surge) Supply voltage (surge) Applied between P-NU,NV,NW 500 V VCES Collector-emitter voltage 600 V ±IC Each IGBT collector current TC= 25°C 75 A ±ICP Each IGBT collector current (peak) TC= 25°C, less than 1ms 150 A PC Collector dissipation TC= 25°C, per 1 chip 162 W Tj Junction temperature -20~+150 °C CONTROL (PROTECTION) PART Symbol Parameter Condition Ratings Unit VD Control supply voltage Applied between VP1-VPC, VN1-VNC 20 V VDB Control supply voltage Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS 20 V VIN Input voltage Applied between UP, VP, WP-VPC, UN, VN, WN-VNC -0.5~VD+0.5 V VFO Fault output supply voltage Applied between FO-VNC -0.5~VD+0.5 V IFO Fault output current Sink current at FO terminal 1 mA VSC Current sensing input voltage Applied between CIN-VNC -0.5~VD+0.5 V TOTAL SYSTEM Symbol Parameter Condition Ratings Unit VCC(PROT) Self protection supply voltage limit (Short circuit protection capability) VD = 13.5~16.5V, Inverter Part Tj = 125°C, non-repetitive, less than 2μs 400 V TC Module case operation temperature (Note 1) -20~+100 °C Tstg Storage temperature -40~+125 °C Viso Isolation voltage 60Hz, Sinusoidal, AC 1minute, between connected all pins and heat-sink plate 2500 Vrms Note 1: Tc measurement point is described in Fig.1. THERMAL RESISTANCE Limits Symbol Parameter Condition Min. Typ. Max. Unit Rth(j-c)Q Inverter IGBT part (per 1/6 module) - - 0.77 °C/W Rth(j-c)F Junction to case thermal resistance (Note 2) Inverter FWDi part (per 1/6 module) - - 1.25 °C/W Note 2: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100μm~+200μm on the contacting surface of DIPIPM and heat-sink. The contacting thermal resistance between DIPIPM case and heat sink Rth(c-f) is determined by the thickness and the thermal conductivity of the applied grease. For reference, Rth(c-f) is about 0.2°C/W (per 1/6 module, grease thickness: 20μm, thermal conductivity: 1.0W/m•k). |
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