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PM600DV1A060 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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PM600DV1A060 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 10 page  3 MITSUBISHI <INTELLIGENT POWER MODULES> PM600DV1A060 FLAT-BASE TYPE INSULATED PACKAGE November. 2011 TOTAL SYSTEM Symbol Parameter Conditions Ratings Unit VCC(PROT) Supply Voltage Protected by SC VD =13.5V ~ 16.5V Inverter Part, Tj =+125°C Start 400 V VCC(surge) Supply Voltage (Surge) Applied between : C1-E2, Surge value 500 V TC Module case operating temperature -20 ~ +100 °C Tstg Storage Temperature -40 ~ +125 °C Visol Isolation Voltage 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS 2500 V *: TC measurement point is just under the chip. THERMAL RESISTANCE Limits Symbol Parameter Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to case, IGBT (per 1 element) (Note.1) - - 0.073 Rth(j-c)D Thermal Resistance Junction to case, FWDi (per 1 element) (Note.1) - - 0.109 Rth(c-s) Contact Thermal Resistance Case to heat sink, (per 1 module) Thermal grease applied (Note.1) - 0.018 - K/W Note1: If you use this value, Rth(s-a) should be measured just under the chips. ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Limits Symbol Parameter Conditions Min. Typ. Max. Unit Tj=25°C - 1.90 2.35 VCEsat Collector-Emitter Saturation Voltage VD=15V, IC=600A VCIN=0V, Pulsed (Fig. 1) Tj=125°C - 1.90 2.35 V VEC Emitter-Collector Voltage IE=600A, VD=15V, VCIN= 15V (Fig. 2) - 1.7 2.8 V ton 0.3 0.8 2.0 trr - 0.4 0.8 tc(on) - 0.4 1.0 toff - 1.0 2.3 tc(off) Switching Time VD=15V, VCIN=0V← →15V VCC=300V, IC=600A Tj=125°C Inductive Load (Fig. 3,4) - 0.3 1.0 s Tj=25°C - - 1 ICES Collector-Emitter Cut-off Current VCE=VCES, VD=15V , VCIN=15V (Fig. 5) Tj=125°C - - 10 mA |
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