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STPS20M120S Datasheet(PDF) 2 Page - STMicroelectronics |
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STPS20M120S Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPS20M120S 2/8 Doc ID 022920 Rev 1 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.54 x IF(AV) + 0.0075 x IF(RMS) 2 Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at Tamb = 25 °C, unless otherwise specified) Symbo l Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) Forward rms current 50 A IF(AV) Average forward current, δ = 0.5 Tc = 125 °C 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C 240 A PARM (1) 1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement using Schottky rectifier avalanche specification”. Repetitive peak avalanche power Tj = 125 °C, tp = 10 µs 1200 W VARM (2) 2. See Figure 9 Maximum repetitive peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 8 A 150 V VASM (2) Maximum single-pulse peak avalanche voltage tp < 10 µs, Tj < 125 °C, IAR < 8 A 150 V Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(3) 3. condition to avoid thermal runaway for a diode on its own heatsink 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case 1.35 °C/W Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25 °C VR =VRRM - 55 275 µA Tj = 125 °C - 20 50 mA VF (2) 2. Pulse test: tp = 380 µs, δ < 2% Forward voltage drop Tj = 125 °C IF = 5 A - 0.47 0.52 V Tj = 25 °C IF = 10 A -0.72 Tj = 125 °C - 0.52 0.57 Tj = 25 °C IF = 20 A -0.84 Tj = 125 °C - 0.63 0.69 dPtot dTj < 1 Rth(j-a) |
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