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CXK5B16120J Datasheet(PDF) 4 Page - Sony Corporation

Part No. CXK5B16120J
Description  65536-word X 16-bit High Speed Bi-CMOS Static RAM
Download  10 Pages
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Maker  SONY [Sony Corporation]
Homepage  http://www.sony.co.jp
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CXK5B16120J Datasheet(HTML) 4 Page - Sony Corporation

 
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CXK5B16120J/TM
• Read cycle
Item
Read cycle time
Address access time
Chip enable access time
Output enable to output valid
Byte select to output valid
Output data hold time
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Byte select to output in low Z (LB, UB)
Chip disable to output in high Z (CE)
Output disable to output in high Z (OE)
Byte select to output in high Z (LB, UB)
12
3
3
0
0
0
0
0
12
12
6
6
6
6
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tRC
tAA
tCO
tOE
tLBC tUB
tOH
tLZ
tOLZ
tLBLZ, tUBLZ
tHZ
tOHZ
tLBHZ, tUBHZ
Symbol
-12
Min.
Max.
Unit
• Write cycle
Item
Write cycle time
Address valid to end of write
Chip enable to end of write
Byte select to end of write
Data valid to end to write
Data hold from end of write
Write pulse width
Address set up time
Write recovery time
Output active from end of write
Write to output in high Z
12
10
10
10
8
0
10
0
0
4
0
6
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tWC
tAW
tCW
tLBW, tUBW
tDW
tDH
tWP
tAS
tWR
tOW*
tWHZ*
Symbol
-12
Min.
Max.
Unit
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.
∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1-(2).
This parameter is sampled and is not 100% tested.


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