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CXK591000YM Datasheet(PDF) 1 Page - Sony Corporation

Part # CXK591000YM
Description  131,072-word X 9-bit High Speed CMOS Static RAM
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Manufacturer  SONY [Sony Corporation]
Direct Link  http://www.sony.co.jp
Logo SONY - Sony Corporation

CXK591000YM Datasheet(HTML) 1 Page - Sony Corporation

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Description
The CXK591000TM/YM/M is a high speed CMOS
static RAM organized as 131,072-words by 9 bits.
A
polysilicon
TFT
cell
technology
realized
extremely low stand-by current and higher data
retention stability.
Special feature are low power consumption and
high speed.
The CXK591000TM/YM/M is a suitable RAM for
portable equipment with battery back up and parity
bit.
Features
• Fast access time
CXK591000TM/YM/M
(Access time)
-55LL
55ns (Max.)
-70LL
70ns (Max.)
-10LL
100ns (Max.)
• Low standby current
CXK591000TM/YM/M
-55LL/70LL/10LL
24µA (Max.)
• Low data retention current
CXK591000TM/YM/M
-55LL/70LL/10LL
14µA (Max.)
• Single +5V supply: 5V ± 10%.
• Low voltage date retention: 2.0V (Min.)
• Broad package line-up
CXK591000TM/YM
8mm
× 20mm 32 pin TSOP Package
CXK591000M
525mil 32 pin SOP
Package
Function
131072 word
× 9 bit static RAM
Structure
Silicon gate CMOS IC
– 1 –
CXK591000TM/YM/M -55LL/70LL/10LL
E93X06-PS
131,072-word
× 9-bit High Speed CMOS Static RAM
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
CXK591000TM
32 pin TSOP (PIastic)
CXK591000YM
32 pin TSOP (PIastic)
CXK591000M
32 pin SOP (PIastic)
Block Diagram
I /O Gate
Column
Decoder
Row
Decoder
Buffer
Buffer
Buffer
VCC
GND
I/O1 I/O9
OE
WE
CE1
A10
A11
A9
A8
A15
A16
A14
A12
A7
A5
A6
A4
A3
A1
A0
A13
A2
CE2
I /O Buffer
Memory
Matrix
1024
× 1152
For the availability of this product, please contact the sales office.


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