CXK581000ATM datasheet(3/12 Pages) SONY | 131072-word x 8-bit High Speed CMOS Static RAM

Part No.	CXK581000ATM

Description	131072-word x 8-bit High Speed CMOS Static RAM

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Manufacturer	SONY [Sony Corporation]

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CXK581000ATM/AYM/AM/AP

Electrical Characteristics

• DC Characteristics

(VCC = 5V ±10%, GND = 0V, Ta = 0 to = +70°C)

Item

Symbol

Test conditions

Min.

Typ.∗1

Max.

Unit

Input leakage current

Output leakage current

Operating power

supply current

Average operating

current

Standby current

Output high

voltage

Output low

voltage

ILI

ILO

ICC1

ICC2

ICC3

ISB1

ISB2

VOH

VOL

VIN = GND to VCC

CE1 = VIH or CE2 = VIL or OE = VIH

or WE = VIL, VI/O = GND to VCC

CE1 = VIL, CE2 = VIH

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

55LL/55SL

Duty = 100%

70LL/70SL

IOUT = 0mA

10LL/10SL

Cycle time 1µs

duty = 100%

IOUT = 0mA

CE1

≤ 0.2V

CE2

≥ VCC – 0.2V

VIL

≤ 0.2V

VIH

≥ VCC – 0.2V

CE2

≤ 0.2V

or

CE1

≥ VCC – 0.2V

{

CE2

≥ VCC – 0.2V

CE1 = VIH or CE2 = VIL

IOH = –1.0mA

IOL = 2.1mA

–1

—

2.4

—

1

15

90

70

60

20

4

2

12

2.4

1

3

—

0.4

—

7

45

40

35

10

—

0.7

—

0.3

0.6

—

µA

mA

µA

mA

V

0 to +70°C

LL∗2

0 to +40°C

+25°C

0 to +70°C

SL∗3

0 to +40°C

+25°C

∗1V

CC

= 5V, Ta = 25°C

∗2 For -55LL/70LL/10LL

∗3 For -55SL/70SL/10SL

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CXK581000ATM Datasheet(PDF) 3 Page - Sony Corporation

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