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CM1800HCB-34N Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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CM1800HCB-34N Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
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4 / 7 page  Sep. 2009 4 MITSUBISHI HVIGBT MODULES CM1800HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) TRANSFER CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 1000 2000 3000 4000 01 3 24 5 6 0123 4 0 02 6 48 10 12 0 0 01234 1000 2000 3000 4000 1000 2000 3000 4000 1000 2000 3000 4000 Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C VGE = 15V VCE = 20V Tj = 125 °C VGE = 8V VGE = 20V VGE = 10V VGE = 12V VGE = 15V |
Similar Part No. - CM1800HCB-34N |
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Similar Description - CM1800HCB-34N |
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