Electronic Components Datasheet Search |
|
CM1200HG-90R Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor |
|
CM1200HG-90R Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor |
3 / 8 page < HVIGBT MODULES > CM1200HG-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules June 2011 3 ELECTRICAL CHARACTERISTICS (continuation) Limits Symbol Item Conditions Min Typ Max Unit Tj = 25°C — 2.60 — VEC Emitter-collector voltage (Note 2) IE = 1200 A (Note 4) VGE = 0 V Tj = 125°C — 2.80 3.40 V Tj = 25°C — 0.70 — trr Reverse recovery time (Note 2) Tj = 125°C — 0.90 — μs Tj = 25°C — 1200 — Irr Reverse recovery current (Note 2) Tj = 125°C — 1300 — A Tj = 25°C — 1100 — Qrr Reverse recovery charge (Note 2) Tj = 125°C — 1700 — μC Tj = 25°C — 1.40 — Erec(10%) Reverse recovery energy (Note 2) (Note 5) Tj = 125°C — 2.25 — J Tj = 25°C — 1.60 — Erec Reverse recovery energy (Note 2) (Note 6) VCC = 2800 V IC = 1200 A VGE = ±15 V RG(on) = 2.7 Ω Ls = 150 nH Inductive load Tj = 125°C — 2.50 — J THERMAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Rth(j-c)Q Junction to Case, IGBT part — — 10.5 K/kW Rth(j-c)D Thermal resistance Junction to Case, FWDi part — — 19.5 K/kW Rth(c-s) Contact thermal resistance Case to heat sink, λgrease = 1W/m ·k, D (c-s) = 100μm — 6.0 — K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Mt M : Main terminals screw 7.0 — 22.0 N·m Ms M : Mounting screw 3.0 — 6.0 N·m Mt Mounting torque M : Auxiliary terminals screw 1.0 — 3.0 N·m m Mass — 1.4 — kg CTI Comparative tracking index 600 — — — da Clearance 26.0 — — mm ds Creepage distance 56.0 — — mm LP CE Parasitic stray inductance — 15.0 — nH RCC’+EE’ Internal lead resistance Tc = 25°C — 0.18 — M Ω rg Internal gate resistance Tc = 25°C — 1.7 — Ω Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating. 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified. |
Similar Part No. - CM1200HG-90R |
|
Similar Description - CM1200HG-90R |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |