CM1200HG-90R datasheet(3/8 Pages) MITSUBISHI

Part #	CM1200HG-90R

Description	HIGH POWER SWITCHING USE INSULATED TYPE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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< HVIGBT MODULES >

CM1200HG-90R

HIGH POWER SWITCHING USE

INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

June 2011

3

ELECTRICAL CHARACTERISTICS (continuation)

Limits

Symbol

Item

Conditions

Min

Typ

Max

Unit

Tj = 25°C

—

2.60

—

VEC

Emitter-collector voltage

(Note 2)

IE = 1200 A

(Note 4)

VGE = 0 V

Tj = 125°C

—

2.80

3.40

V

Tj = 25°C

—

0.70

—

trr

Reverse recovery time

(Note 2)

Tj = 125°C

—

0.90

—

μs

Tj = 25°C

—

1200

—

Irr

Reverse recovery current

(Note 2)

Tj = 125°C

—

1300

—

A

Tj = 25°C

—

1100

—

Qrr

Reverse recovery charge

(Note 2)

Tj = 125°C

—

1700

—

μC

Tj = 25°C

—

1.40

—

Erec(10%)

Reverse recovery energy

(Note 2)

(Note 5)

Tj = 125°C

—

2.25

—

J

Tj = 25°C

—

1.60

—

Erec

Reverse recovery energy

(Note 2)

(Note 6)

VCC = 2800 V

IC = 1200 A

VGE = ±15 V

RG(on) = 2.7 Ω

Ls = 150 nH

Inductive load

Tj = 125°C

—

2.50

—

J

THERMAL CHARACTERISTICS

Limits

Symbol

Item

Conditions

Min

Typ

Max

Unit

Rth(j-c)Q

Junction to Case, IGBT part

—

10.5

K/kW

Rth(j-c)D

Thermal resistance

Junction to Case, FWDi part

—

19.5

K/kW

Rth(c-s)

Contact thermal resistance

Case to heat sink,

λgrease = 1W/m

·k, D

(c-s) = 100μm

—

6.0

—

K/kW

MECHANICAL CHARACTERISTICS

Limits

Symbol

Item

Conditions

Min

Typ

Max

Unit

Mt

M : Main terminals screw

7.0

—

22.0

N·m

Ms

M : Mounting screw

3.0

—

6.0

N·m

Mt

Mounting torque

M : Auxiliary terminals screw

1.0

—

3.0

N·m

m

Mass

—

1.4

—

kg

CTI

Comparative tracking index

600

—

da

Clearance

26.0

—

mm

ds

Creepage distance

56.0

—

mm

LP CE

Parasitic stray inductance

—

15.0

—

nH

RCC’+EE’

Internal lead resistance

Tc = 25°C

—

0.18

—

M

Ω

rg

Internal gate resistance

Tc = 25°C

—

1.7

—

Ω

Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating.

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.

6. Definition of all items is according to IEC 60747, unless otherwise specified.

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