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CM800DZB-34N Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor |
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CM800DZB-34N Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor |
5 / 7 page Sep. 2009 5 MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 0 0.2 0.4 0.6 0.8 1.0 1.2 0 400 800 1200 1600 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 05 10 15 02468 10 12 14 100 10-1 23 5 7 101 102 23 5 7 23 5 7 CAPACITANCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE ( µC) COLLECTOR CURRENT (A) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) -15 -10 -5 0 5 10 15 20 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) GATE RESISTANCE ( Ω) VCC = 900V, IC = 800A VGE = ±15V, Tj = 125°C Inductive load 102 103 101 100 2 3 5 7 2 3 5 7 2 3 5 7 VCE = 900V, IC = 800A Tj = 25 °C Erec Eoff Cies Coes Cres VCC = 900V, VGE = ±15V RG (on) = 1.6 Ω, RG (off) = 3.9Ω Tj = 125 °C, Inductive load Eon VGE = 0V, Tj = 25 °C f = 100kHz Erec Eoff Eon |
Similar Part No. - CM800DZB-34N |
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Similar Description - CM800DZB-34N |
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