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CM800DY-24S Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor |
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CM800DY-24S Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor |
4 / 9 page < IGBT MODULES > CM800DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : August 2011 4 CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi TEST CIRCUIT IC C2E1 E2 Es2 G2 Es1 G1 V Short- circuited C1 VGE=15 V IC C2E1 E2 Es2 G2 Es1 G1 Short- circuited C1 VGE=15 V V IE C2E1 E2 Es2 G2 Es1 G1 V Short- circuited C1 Short- circuited IE C2E1 E2 Es2 G2 Es1 G1 Short- circuited C1 V Short- circuited Tr1 Tr2 Di1 Di2 VCEsat test circuit VEC test circuit |
Similar Part No. - CM800DY-24S |
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Similar Description - CM800DY-24S |
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