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M2S025TS-1VFG144YES Datasheet(PDF) 40 Page - Microsemi Corporation |
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M2S025TS-1VFG144YES Datasheet(HTML) 40 Page - Microsemi Corporation |
40 / 156 page ![]() SmartFusion2 DC and Switching Characteristics 2- 22 R e visio n 0 ADVANCE INFORMATION (Subject to Change) Single-Ended I/O Standards Low Voltage Complementary Metal Oxide Semiconductor (LVCMOS) LVCMOS is a widely used switching standard implemented in CMOS transistors. This standard is defined by JEDEC (JESD 8-5). The LVCMOS standards supported in SmartFusion2 SoC FPGAs are LVCMOS12, LVCMOS15, LVCMOS18, and LVCMOS25 and LVCMOS33. 3.3 V LVCMOS/LVTTL LVCMOS 3.3 V or Low-Voltage Transistor-Transistor Logic (LVTTL) is a general standard for 3.3 V applications. Minimum and Maximum DC/AC Input and Output Levels Specification Table 2-18 • LVTTL/LVCMOS 3.3 V DC Voltage Specification Symbol Parameters Conditions Min. Typ. Max. Units Notes Recommended DC Operating Conditions VDDI Supply voltage 3.15 3.3 3.45 V LVTTL/LVCMOS 3.3 V DC Input Voltage Specification VIH (DC) DC input logic High 2.0 – 3.45 V VIL (DC) DC input logic Low –0.3 – 0.8 V IIH (DC) Input current High – – 10 mA IIL (DC) Input current Low – – 10 mA LVCMOS 3.3 V DC Output Voltage Specification VOH DC output logic High VDDI – 0.4 – – V 1 VOL DC output logic Low – – 0.4 V 1 LVTTL 3.3 V DC Output Voltage Specification VOH DC output logic High 0.4 – – V VOL DC output logic Low – – 2.4 V LVTTL/LVCMOS 3.3 V AC Specifications Fmax Maximum data rate (for MSIO I/O bank) AC loading: 10 pF / 500 Ohm Load, maximum drive/slew – – 600 Mbps LVTTL/LVCMOS 3.3 V AC Test Parameters Specifications Vtrip Measuring/trip point for data path – 1.4 – V Rent Resistance for enable path (tZH, tZL, tHZ, tLZ) – 2K – Ohms Cent Capacitive loading for enable path (tZH, tZL, tHZ, tLZ) – 5 – pF Cload Capacitive loading for data path (tDP) – 5 – pF Notes: 1. The VOH/VOL test points selected ensure compliance with LVCMOS 3.3 V JESD8-B requirements. |
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