CM150TL-12NF_12 datasheet(4/5 Pages) MITSUBISHI

Part #	CM150TL-12NF

Description	HIGH POWER SWITCHING USE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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4 / 5 page

Feb. 2009

4

MITSUBISHI IGBT MODULES

CM150TL-12NF

HIGH POWER SWITCHING USE

101

102

23

5

7

103

23

5

7

101

102

2

3

5

7

103

2

3

5

7

trr

Irr

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

EMITTER CURRENT IE (A)

Conditions:

VCC = 300V

VGE =

±15V

RG = 4.2

Ω

Tj = 25

°C

Inductive load

10–3

101

100

10–5

10–4

100

7

5

3

2

10–2

7

5

3

2

10–1

7

5

3

2

10–323 5 7

23 5 7

101

10–2

10–1

100

10–3

7

5

3

2

10–2

7

5

3

2

10–1

23 5 7

Single Pulse,

TC = 25

°C

Under the chip

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

TIME (s)

IGBT part:

Per unit base =

Rth(j–c) = 0.17

K/W

FWDi part:

Per unit base =

Rth(j–c) = 0.31

K/W

10–1

2

3

5

7

2

3

5

7

101

102

57

103

23

5

7

23

RECOVERY LOSS vs. IE

(TYPICAL)

EMITTER CURRENT IE (A)

Conditions:

VCC = 300V

VGE =

±15V

RG = 4.2

Ω

Tj = 125

°C

Inductive load

C snubber at bus

Err

101

100

10–1

2

3

5

7

2

3

5

7

101

102

57

103

23

5

7

23

SWITCHING LOSS vs.

COLLECTOR CURRENT

(TYPICAL)

COLLECTOR CURRENT IC (A)

Conditions:

VCC = 300V

VGE =

±15V

RG = 4.2

Ω

Tj = 125

°C

Inductive load

C snubber at bus

Esw(off)

Esw(on)

SWITCHING LOSS vs.

GATE RESISTANCE

(TYPICAL)

GATE RESISTANCE RG (

Ω)

102

101

100

Conditions:

VCC = 300V

VGE =

±15V

IC = 150A

Tj = 125

°C

Inductive load

C snubber at bus

Esw(off)

Esw(on)

2

3

5

7

2

3

5

7

100

101

57

102

23

5

7

23

101

100

10–1

2

3

5

7

2

3

5

7

100

101

57

102

23

5

7

23

RECOVERY LOSS vs.

GATE RESISTANCE

(TYPICAL)

GATE RESISTANCE RG (

Ω)

Conditions:

VCC = 300V

VGE =

±15V

IE = 150A

Tj = 125

°C

Inductive load

C snubber at bus

Err

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