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ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223

September 2012

ASX620

250-3000 MHz MMIC Amplifier

Parameters

Units

Typical

Frequency

MHz

900

Gain

dB

29.5

S11

dB

-15

S22

dB

-8

Output IP3

1)

dBm

48

Noise Figure

dB

6.7

Output P1dB

dBm

33

Current

mA

950

Device Voltage

V

5

* Performance tested at 50 W system and a room temperature.

1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.

Parameters

Units

Min

Typ

Max

Testing Frequency

MHz

900

Gain

dB

28.5

29.5

S11

dB

-15

S22

dB

-8

Output IP3

dBm

46

48

Noise Figure

dB

6.7

7.0

Output P1dB

dBm

31

33

Current

mA

900

950

1000

Device Voltage

V

5

* 100% in-house DC & RF testing is done on packaged products before taping.

Parameters

Rating

Operating Case Temperature

-40 to +85°C

Storage Temperature

-40 to +150°C

Device Voltage

+6 V

Operating Junction Temperature

+150°C

Input RF Power (CW, 50ohm matched)*

25 dBm

Features

Description

Typical Performance

*

Absolute Maximum Ratings

·29.5 dB Gain at 900 MHz

·33 dBm P1dB at 900 MHz

·48 dBm Output IP3 at 900 MHz

·MTTF > 100 Years

·Two Power Supplies

The ASX620, a power amplifier MMIC, has a high

linearity, high gain, and high efficiency over a wide

range of frequency, being suitable for use in both

receiver and transmitter of telecommunication

systems up to 3 GHz. The amplifier is available in

an SOIC-8 package and passes through the strin-

gent DC, RF, and reliability tests.

Application Circuit

·196 ~ 216 MHz

·CDMA

·GSM

·RFID(USA)

Product Specifications*

ASX620

Package Style: SOIC-8

Pin Configuration

Pin No.

Function

1

2nd stage RF IN

2

1st stage RF OUT

3,5,8

GND

4

1st stage RF IN

6,7

2nd stage RF OUT