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STRH100N6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STRH100N6 Datasheet(HTML) 5 Page - STMicroelectronics |
5 / 18 page STRH100N6 Electrical characteristics Doc ID 18353 Rev 3 5/18 2 Electrical characteristics (TC = 25°C unless otherwise specified). Pre-irradiation Table 5. Pre-irradation on/off states Symbol Parameter Test conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss 10 µA IGSS Gate body leakage current (VDS = 0) VGS = 20 V VGS = - 20 V -100 100 nA nA BVDSS (1) 1. This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature). Drain-to-source breakdown voltage VGS = 0 V, ID = 1 mA 60 V VGS(th) Gate threshold voltage VDS =VGS, ID = 1 mA 2 4.5 V RDS(on) Static drain-source on resistance VGS = 12 V ID = 40 A 0.012 0.0135 Ω Table 6. Pre-irradation dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss (1) Crss 1. This value is guaranteed over the full range of temperature. Input capacitance Output capacitance Reverse transfer capacitance VGS = 0, VDS = 25 V, f=1MHz 3916 864 325 4895 1080 407 5874 1296 488 pF pF pF Qg Qgs Qgd Total gate charge Gate-to-source charge Gate-to-drain (“Miller”) charge VDD = 30 V, ID = 80 A, VGS=12 V 107 22 34 134.4 32.5 46.5 161 43 59 nC nC nC RG (2) 2. Not tested, guaranteed by process. Gate input resistance f=1MHz Gate DC bias=0 test signal level= 20 mV open drain 1.6 2 2.4 Ω |
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