STRH100N6 datasheet(5/18 Pages) STMICROELECTRONICS

Part #	STRH100N6

Description	Rad-Hard N-channel, 60 V, 80 A Power MOSFET

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STRH100N6

Electrical characteristics

Doc ID 18353 Rev 3

5/18

2

Electrical characteristics

(TC = 25°C unless otherwise specified).

Pre-irradiation

Table 5.

Pre-irradation on/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IDSS

Zero gate voltage drain

current (VGS = 0)

80% BVDss

10

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = 20 V

VGS = - 20 V

-100

100

nA

BVDSS

(1)

1.

This rating is guaranteed @ TJ ≥ 25 °C (see Figure 10: Normalized BVDSS vs temperature).

Drain-to-source breakdown

voltage

VGS = 0 V, ID = 1 mA

60

V

VGS(th)

Gate threshold voltage

VDS =VGS, ID = 1 mA

2

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 12 V

ID = 40 A

0.012 0.0135

Ω

Table 6.

Pre-irradation dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

(1)

Crss

1.

This value is guaranteed over the full range of temperature.

Input capacitance

Output capacitance

Reverse transfer

capacitance

VGS = 0, VDS = 25 V,

f=1MHz

3916

864

325

4895

1080

407

5874

1296

488

pF

Qg

Qgs

Qgd

Total gate charge

Gate-to-source charge

Gate-to-drain (“Miller”)

charge

VDD = 30 V, ID = 80 A,

VGS=12 V

107

22

34

134.4

32.5

46.5

161

43

59

nC

RG

(2)

2.

Not tested, guaranteed by process.

Gate input resistance

f=1MHz Gate DC bias=0

test signal level= 20 mV

open drain

1.6

2

2.4

Ω

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