RHF330 datasheet(5/22 Pages) STMICROELECTRONICS

Part #	RHF330

Description	Rad-hard 1 GHz low noise operational amplifier

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RHF330

Electrical characteristics

Doc ID 15576 Rev 3

5/22

SR

Slew rate

Vout = 2 Vpp,

AV = +2, RL = 100 Ω

+25°C

1800

V/

μs

VOH

High level output voltage

RL = 100 Ω

+125°C

1.35

V

+25°C

1.5

1.64

-55°C

1.35

VOL

Low level output voltage

RL = 100 Ω

+125°C

-1.35

V

+25°C

-1.55

-1.5

-55°C

-1.35

Iout

Isink

(1)

Output to GND

+125°C

360

mA

+25°C

360

453

-55°C

360

Isource

(2)

Output to GND

+125°C

-320

+25°C

-320

-400

-55°C

-320

Noise and distortion

eN

Equivalent input noise

voltage(3)

F = 100 kHz

+25°C

1.3

nV/

√Hz

iN

Equivalent positive input noise

current(3)

F = 100 kHz

+25°C

22

pA/

√Hz

Equivalent negative input

noise current(3)

F = 100 kHz

+25°C

16

pA/

√Hz

SFDR

Spurious free dynamic range

AV = +2, Vout = 2 Vpp,

RL = 100 Ω

dBc

F = 10 MHz

+25°C

-78

F = 20 MHz

+25°C

-73

F = 100 MHz

+25°C

-48

F = 150 MHz

+25°C

-37

1.

See Figure 11 for more details.

2.

See Figure 10 for more details.

3.

See Chapter 5 on page 14.

Table 4.

Electrical characteristics for VCC= ±2.5 V, Tamb =+25°C

(unless otherwise specified) (continued)

Symbol

Parameter

Test conditions

Temp.

Min.

Typ.

Max.

Unit

Table 5.

Closed-loop gain and feedback components

Gain (V/V)

+ 1

1

+ 2- 2

+ 4- 4

+ 10

- 10

Rfb (Ω)

300

270

300

270

240

200

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