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IPD50R380CE Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPD50R380CE Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 20 page 500V CoolMOS TM CE 4 Application Note AN 2012-04 V1.0 April 2012 1 Introduction The new CoolMOS TM CE is the fourth technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction (SJ) principle in the 500V class. 500V CE portfolio provides all benefits of a fast switching superjunction (SJ) MOSFET while keeping ease of use and implementation. The complete CE series of MOSFETs achieve very low conduction and switching losses, and can make applications more efficient, more compact, lighter and thermally cooler. This application note will describe the fundamental differences between a SJ MOSFET and a standard MOSFET. Additionally, all features and benefits impacting the target applications will be described. Furthermore, these features will be illustrated from both a theoretical point of view and in hardware measurements. It will also be shown that CoolMOS TM CE is a cost effective alternative compared to standard MOSFETs, which enables reaching higher efficiency levels while offering an attractive price/performance ratio. 1.1 Features and Benefits The following table represents the features and benefits of CoolMOS TM CE in comparison to standard MOSFETs, which will be discussed in depth in the main part of this application note. Table 1: features and benefits FEATURES BENEFITS Reduced energy stored in output capacitance (Eoss) Reduction of switching losses, improvement of light load efficiency High body diode ruggedness Higher reliability under critical operating conditions Reduced reverse recovery charge (Qrr) Lower possibility of hard commutation in resonant topologies Reduced gate charge (Qg) Improvement in light load efficiency Lower gate drive capability required Overall Features Easy control of switching behavior Outstanding reliability with proven CoolMOS TM quality |
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