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IDH16G65C5 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IDH16G65C5
Description  650V SiC thinQ!??Generation 5 diodes
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IDH16G65C5 Datasheet(HTML) 1 Page - Infineon Technologies AG

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Product Brief
ThinQ!™ Generation 5 represents Infineon’s leading edge technology for
SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering
process, already introduced with G3, is now combined with a new, more
compact design and thin wafer technology. The result is a new family of
products showing improved efficiency over all load conditions, coming from
both the improved thermal characteristics and a lower figure of merit (Q
c x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
„
V
br at 650V
„
Improved Figure of Merit (Q
c x Vf)
„
No reverse recovery charge
„
Soft switching reverse
recovery waveform
„
Temperature independent
switching behavior
„
High operating temperature
(T
j max 175°C)
„
Improved surge capability
„
Pb-free lead plating
„
10 years manufacturing of SiC diodes
Benefits
„
Higher safety margin against
Overvoltage; best match with
CoolMOS™ 650V products
„
Improved efficiency over all
load conditions
„
Increased efficiency compared to
Silicon Diode alternatives
„
Reduced EMI compared to snappier
Silicon diode reverse recovery
waveform
„
Highly stable switching performance
„
Reduced cooling requirements
„
Reduced risks of thermal runaway
„
RoHS compliant
„
High quality know-how and capacity
in SiC diode manufacture
Applications
„
Telecom/Server SMPS
„
Solar/UPS
„
PC Silverbox
„
LED/LCD TV
„
Motor Drives
„
HID lighting
www.infineon.com/sic
Features
650V SiC thinQ!™ Generation 5 diodes
Your way is our way: improve efficiency and solution costs
Experimental results
Efficiency comparison among the three
IFX generations of 8A SiC diodes
a) Absolute values
b) Referred to thinQ!™ Gen 5
(CCM PFC, High line, Pout max=1800 W,
f
SW=65 kHz, THS=60°C,
MOSFET: IPW60R075CP)
97.0
97.5
98.0
98.5
10%
20%
30%
40%
50%
60%
70%
80%90%
100%
- 0.15
- 0.10
- 0.05
0.00
0.05
0.10
0.15
10%
20%
30%
40%
50%
60%
70%
80%
90% 100%
Output Power [% nominal]
Output Power [% nominal]
Generation 5
Generation 3
Generation 2
Generation 5
Generation 3
Generation 2
a)
b)


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