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TPD1039F Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPD1039F Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 10 page TPD1039F 2008-03-18 4 Electrical Characteristics (Tch = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Drain-source clamp voltage V (CL)DSS - VIN = 0 V, ID = 1 mA 45 - - V High-level input voltage VIH 1 VDS = 10 to 40 V, ID ≥ 1 A 3.5 - 6 Low-level input voltage VIL 1 VDS = 10 to 40 V, ID ≤ 10μA - - 0.8 V Drain cut-off current IDSS - VIN = 0 V, VDS = 40 V - - 10 μA High-level input current IIH - VIN = 5 V, at normal operation - 400 μA Drain-source ON-resistance RDS(ON) - VIN = 5 V, ID = 1 A - - 0.25 Ω Protective circuit operation input Voltage range VIN(opr) - - 3.5 - 6 V Overtemperature detection (Note 6) TOT 2 VIN = 5 V, VDD = 12 V 125 - - °C Overcurrent detection IOC 3 VIN = 5 V, VDS = 24 V - 5 - A ton - 15 - Switching times toff 4 VDD = 24 V, VIN = 0 V/5 V, RL = 24Ω - 45 - μs Drain-source diode forward Voltage VDSF - VIN = 0 V, IDR = 1.5 A - 0.9 1.8 V Note 6: Overtemperature protection is tripped at a channel temperature of 125°C. Ensure that the channel temperature, Tch, does not exceed 125°C under the worst-case conditions. This feature is intended to protect the device against damage. The device reliability is not guaranteed if the device persists to remain overtemperature protection mode. Test Circuit 1 H-level input voltage, L-level input voltage measuring circuit Test circuit Measured waveforms Test Circuit 2 Overtemperature detection measuring circuit Test circuit Measured waveforms 1 A VIH VIN ID 10 μA VIL TPD1039F VDD = 10 to 40 V IN SOURCE DRAIN VIN ID TPD1039F VDD = 12 V RL = 1.2kΩ IN SOURCE DRAIN VIN = 5 V 11 V TOT VDS Ta Ta increase 12 V 0V 1 V Ta decrease |
Similar Part No. - TPD1039F |
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Similar Description - TPD1039F |
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