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JDH2S02SC Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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JDH2S02SC Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page JDH2S02SC 2008-02-05 1 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S02SC UHF Band Mixer • Suitable for reducing set size through the use of a two-pin small package supporting high-density mounting Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VR 10 V Forward current IF 10 mA Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 1 mA ⎯ 0.24 ⎯ V Forward current IF VF = 0.5 V 2 ⎯ ⎯ mA Reverse current IR VR = 0.5 V ⎯ ⎯ 25 μA Capacitance CT VR = 0.2 V, f = 1 MHz ⎯ 0.25 ⎯ pF Note: Signal level when capacitance is measured: Vsig = 20 mVrms Marking Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with the product should be made of antistatic materials. Unit: mm 0.32±0.03 0.27±0.02 0.025±0.015 1:カソード 2:アノード 1 2 SC2 JEDEC ― JEITA ― TOSHIBA 1-1R1A Weight: 0.17 mg (typ.) 2 1 1 2 1: Cathode 2: Anode |
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