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IS64WV2568EDBLL-10CTA1 Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

Part # IS64WV2568EDBLL-10CTA1
Description  256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS64WV2568EDBLL-10CTA1 Datasheet(HTML) 4 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
11/08/2011
IS61/64WV2568EDBLL
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
-8
-10
-20
Symbol Parameter
Test Conditions
Min. Max.
Min. Max.
Min. Max.
Unit
iCC
VddDynamicOperating Vdd=Max.,
Com.
—40
—30
—25
mA
SupplyCurrent
iOut=0mA,f=fmax
Ind.
—45
—35
—30
Auto.
——
—50
—45
typ.(2)
21
21
iCC1
Operating
Vdd=Max.,
Com.
—20
—20
—20
mA
SupplyCurrent
iOut=0mA,f=0
Ind.
—25
—25
—25
Auto.
——
—40
—40
isb1
TTLStandbyCurrent
Vdd=Max.,
Com.
—10
—10
—10
mA
(TTLInputs)
Vin=VihorVil
Ind.
—15
—15
—15
CE
≥Vih,f=0
Auto.
——
—30
—30
isb2
CMOSStandby
Vdd=Max.,
Com.
—5
—5
—5
mA
Current(CMOSInputs) CE≥Vdd–0.2V,
Ind.
—6
—6
—6
Vin≥Vdd–0.2V,or
Auto.
——
—15
—15
Vin≤ 0.2V,f=0
typ.(2)
1.5
1.5
Note:
1.Atf=fmax,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.
2.TypicalvaluesaremeasuredatVdd=3.0V,Ta=25oCandnot100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 2.4V-3.6V
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOh
OutputHIGHVoltage
Vdd=Min.,iOh=–1.0mA
1.8
—
V
VOl
OutputLOWVoltage
Vdd=Min.,iOl=1.0mA
—
0.4
V
Vih
InputHIGHVoltage
2.0
Vdd+0.3
V
Vil
InputLOWVoltage(1)
–0.3
0.8
V
ili
InputLeakage
GND≤Vin≤ Vdd
–1
1
µA
ilO
OutputLeakage
GND≤VOut≤ Vdd,OutputsDisabled
–1
1
µA
Note:
1.Vil(min.)=–0.3VDC;Vil(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
Vih(max.)=Vdd+0.3VdC;Vih(max.)=Vdd+2.0VaC(pulsewidth<10ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
VDD = 3.3V + 10%
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOh
OutputHIGHVoltage
Vdd=Min.,iOh=–4.0mA
2.4
—
V
VOl
OutputLOWVoltage
Vdd=Min.,iOl=8.0mA
—
0.4
V
Vih
InputHIGHVoltage
2
Vdd+0.3
V
Vil
InputLOWVoltage(1)
–0.3
0.8
V
ili
InputLeakage
GND≤Vin≤Vdd
–1
1
µA
ilO
OutputLeakage
GND≤VOut≤Vdd,OutputsDisabled
–1
1
µA
Note:
1.Vil(min.)=–0.3VDC;Vil(min.)=–2.0VAC(pulsewidth<10ns).Not100%tested.
Vih(max.)=Vdd+0.3VdC;Vih(max.)=Vdd+2.0VaC(pulsewidth<10ns).Not100%tested.


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