IS61WV3216DALL datasheet(7/20 Pages) ISSI

Part #	IS61WV3216DALL

Description	32K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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Integrated Silicon Solution, Inc. — www.issi.com

7

Rev. A

05/14/2012

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IS61WV3216DALL/DALS, IS61WV3216DBLL/DBLS,

IS64WV3216DBLL/DBLS

OPERATING RANGE (VDD) (IS61WV3216DBLL)(1)

Range

Ambient Temperature

VDD (8 nS)1

VDD (10 nS)1

Commercial

0°Cto+70°C

3.3V+5%

2.4V-3.6V

Industrial

–40°Cto+85°C

3.3V+5%

2.4V-3.6V

Note:

1.Whenoperatedintherangeof2.4V-3.6V,thedevicemeets10ns.Whenoperatedintherange

of3.3V+5%,thedevicemeets8ns.

OPERATING RANGE (VDD) (IS64WV3216DBLL)

Range

Ambient Temperature

VDD (10 nS)

Automotive

–40°Cto+125°C

2.4V-3.6V

HIGH SPEED (IS61WV3216DALL/DBLL)

OPERATING RANGE (VDD) (IS61WV3216DALL)

Range

Ambient Temperature

VDD

Speed

Commercial

0°Cto+70°C

1.65V-2.2V

20ns

Industrial

–40°Cto+85°C

1.65V-2.2V

20ns

Automotive

–40°Cto+125°C

1.65V-2.2V

20ns

POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)

-8

-10

-12

-20

Symbol Parameter

Test Conditions

Min. Max.

Unit

Icc

VddDynamicOperating Vdd = Max.,

Com.

—65

—50

—45

—40

mA

SupplyCurrent

Iout = 0 mA,f=fmAX

Ind.

—70

—55

—50

—45

CE

=VIL

Auto.(3)

——

—65

—55

—50

VIn ≥ Vdd – 0.3V, or

typ.(2)

45 45

45

VIn ≤ 0.4V

Isb2

CMOSStandby

Vdd = Max.,

Com.

—

40

—

40

—

40

—40

µA

Current(CMOSInputs) CE≥Vdd – 0.2V,

Ind.

—

55

—

55

—

55

—

55

VIn ≥ Vdd – 0.2V, or

Auto.

——

—90

—

90

—

90

VIn ≤ 0.2V, f=0

typ.(2)

44

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Note:

1.Atf=fmAX,addressanddatainputsarecyclingatthemaximumfrequency,f=0meansnoinputlineschange.

2.TypicalvaluesaremeasuredatVdd=3.0V,TA=25oCandnot100%tested.

3.ForAutomotivegradeat15ns,typ.Icc=38mA,not100%tested.

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