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RN2712JE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN2712JE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page RN2712JE,RN2713JE 2007-11-01 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. A wide range of resistor values is available for use in various circuits. Equivalent Circuit Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −100 mA Collector power dissipation PC * 100 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating Equivalent Circuit (top view) 1.BASE1 2.EMITTER 3.BASE2 4.COLLECTOR2 5.COLLECTOR1 (B1) (E) (B2) (C2) (C1) JEDEC ― JEITA ― TOSHIBA 2-2P1D Weight: 0.003g(typ.) Unit : mm 5 4 1 2 3 Q2 Q1 |
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